Phase matching pseudo-resonant tunable InP-based MOEMS
Identifieur interne : 001D46 ( Chine/Analysis ); précédent : 001D45; suivant : 001D47Phase matching pseudo-resonant tunable InP-based MOEMS
Auteurs : RBID : Pascal:02-0555735Descripteurs français
- Pascal (Inist)
- Dispositif microélectromécanique, Microoptique, Système optique, Photodétecteur, Circuit accordable, Conception système, Simulation circuit, Propriété optique, Fabrication microélectronique, Diode électroluminescente, Pompage optique, Fil quantique, Indium phosphure, Composé binaire, Microusinage, Emission spontanée, Spectre émission, Simulation numérique, Résultat expérimental, Forme onde, InP, In P.
English descriptors
- KwdEn :
- Binary compound, Circuit simulation, Emission spectrum, Experimental result, Indium phosphide, Light emitting diode, Microelectromechanical device, Microelectronic fabrication, Micromachining, Microoptics, Numerical simulation, Optical properties, Optical pumping, Optical system, Photodetector, Quantum wire, Spontaneous emission, System design, Tunable circuit, Waveform.
Abstract
In this paper, we present a new concept of tunable active Micro-Opto-Electro-Mechanical-System (MOEMS) microdevice for specific applications in the 1.3-2.5 μm wavelength range such as near infrared spectroscopy or optical telecommunications. The proposed optical structure can be used for the realisation of tunable wavelength selective devices (photodetectors or emitters). The device uses a radically new optical design which separates the detector (or emitter) from the filter but place it on top of the filter. As compared to the existing micro-mechanical tunable devices, this concept does present two main advantages such as the improvement of the optical spectral response (forward and backward travelling of the optical waves through the active part) and relaxation of the technological constraints for fabrication (planar monolithic integration of the active component with post-process micromachining).We present here the design, the optical simulations and the fabrication procedure of a first demonstrator consisting in an optically pumped wavelength selective and tunable light emitting diode. The gain active region comprises InAs quantum wires designed for light emission around 1500 nm. The MOEM structure is made of InP/air gap layers. We have obtained an increase of the spontaneous emission by a factor of about 40 and a tuning range about 60 nm for actuation voltages up to 15 V.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 00E410
- to stream Main, to step Repository: 00EC81
- to stream Chine, to step Extraction: 001D46
Links to Exploration step
Pascal:02-0555735Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Phase matching pseudo-resonant tunable InP-based MOEMS</title><author><name sortKey="Zhou, D" uniqKey="Zhou D">D. Zhou</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Tsinghua University, Department of Electronic engineering </s1><s2>Beijing</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Sun, K" uniqKey="Sun K">K. Sun</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Laboratoire d'Electronique, Optoélectronique et Microsystèmes (LEOM) CNR, Ecole Centrale de Lyon, BP 163</s1><s2>69131 Ecully</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Ecully</settlement></placeName></affiliation></author><author><name sortKey="Garrigues, M" uniqKey="Garrigues M">M. Garrigues</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Laboratoire d'Electronique, Optoélectronique et Microsystèmes (LEOM) CNR, Ecole Centrale de Lyon, BP 163</s1><s2>69131 Ecully</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Ecully</settlement></placeName></affiliation></author><author><name sortKey="Leclercq, J L" uniqKey="Leclercq J">J-L. Leclercq</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Laboratoire d'Electronique, Optoélectronique et Microsystèmes (LEOM) CNR, Ecole Centrale de Lyon, BP 163</s1><s2>69131 Ecully</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Ecully</settlement></placeName></affiliation></author><author><name sortKey="Regreny, P" uniqKey="Regreny P">P. Regreny</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Laboratoire d'Electronique, Optoélectronique et Microsystèmes (LEOM) CNR, Ecole Centrale de Lyon, BP 163</s1><s2>69131 Ecully</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Ecully</settlement></placeName></affiliation></author><author><name sortKey="Peng, J" uniqKey="Peng J">J. Peng</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Tsinghua University, Department of Electronic engineering </s1><s2>Beijing</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Viktorovitch, P" uniqKey="Viktorovitch P">P. Viktorovitch</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Laboratoire d'Electronique, Optoélectronique et Microsystèmes (LEOM) CNR, Ecole Centrale de Lyon, BP 163</s1><s2>69131 Ecully</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Ecully</settlement></placeName></affiliation></author><author><name sortKey="Pautet, C" uniqKey="Pautet C">C. Pautet</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>ATMEL-Grenoble Avenue de Rochepleine, BP 123</s1><s2>38521 Saint Egrève</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Saint Egrève</settlement></placeName></affiliation></author><author><name sortKey="Cortial, S" uniqKey="Cortial S">S. Cortial</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>ATMEL-Grenoble Avenue de Rochepleine, BP 123</s1><s2>38521 Saint Egrève</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Saint Egrève</settlement></placeName></affiliation></author><author><name sortKey="Moy, J P" uniqKey="Moy J">J. P. Moy</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>ATMEL-Grenoble Avenue de Rochepleine, BP 123</s1><s2>38521 Saint Egrève</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Saint Egrève</settlement></placeName></affiliation></author><author><name sortKey="Hugon, X" uniqKey="Hugon X">X. Hugon</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>ATMEL-Grenoble Avenue de Rochepleine, BP 123</s1><s2>38521 Saint Egrève</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Saint Egrève</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0555735</idno><date when="2002">2002</date><idno type="stanalyst">PASCAL 02-0555735 INIST</idno><idno type="RBID">Pascal:02-0555735</idno><idno type="wicri:Area/Main/Corpus">00E410</idno><idno type="wicri:Area/Main/Repository">00EC81</idno><idno type="wicri:Area/Chine/Extraction">001D46</idno></publicationStmt><seriesStmt><idno type="ISSN">1017-2653</idno><title level="j" type="main">SPIE proceedings series</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compound</term><term>Circuit simulation</term><term>Emission spectrum</term><term>Experimental result</term><term>Indium phosphide</term><term>Light emitting diode</term><term>Microelectromechanical device</term><term>Microelectronic fabrication</term><term>Micromachining</term><term>Microoptics</term><term>Numerical simulation</term><term>Optical properties</term><term>Optical pumping</term><term>Optical system</term><term>Photodetector</term><term>Quantum wire</term><term>Spontaneous emission</term><term>System design</term><term>Tunable circuit</term><term>Waveform</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dispositif microélectromécanique</term><term>Microoptique</term><term>Système optique</term><term>Photodétecteur</term><term>Circuit accordable</term><term>Conception système</term><term>Simulation circuit</term><term>Propriété optique</term><term>Fabrication microélectronique</term><term>Diode électroluminescente</term><term>Pompage optique</term><term>Fil quantique</term><term>Indium phosphure</term><term>Composé binaire</term><term>Microusinage</term><term>Emission spontanée</term><term>Spectre émission</term><term>Simulation numérique</term><term>Résultat expérimental</term><term>Forme onde</term><term>InP</term><term>In P</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this paper, we present a new concept of tunable active Micro-Opto-Electro-Mechanical-System (MOEMS) microdevice for specific applications in the 1.3-2.5 μm wavelength range such as near infrared spectroscopy or optical telecommunications. The proposed optical structure can be used for the realisation of tunable wavelength selective devices (photodetectors or emitters). The device uses a radically new optical design which separates the detector (or emitter) from the filter but place it on top of the filter. As compared to the existing micro-mechanical tunable devices, this concept does present two main advantages such as the improvement of the optical spectral response (forward and backward travelling of the optical waves through the active part) and relaxation of the technological constraints for fabrication (planar monolithic integration of the active component with post-process micromachining).We present here the design, the optical simulations and the fabrication procedure of a first demonstrator consisting in an optically pumped wavelength selective and tunable light emitting diode. The gain active region comprises InAs quantum wires designed for light emission around 1500 nm. The MOEM structure is made of InP/air gap layers. We have obtained an increase of the spontaneous emission by a factor of about 40 and a tuning range about 60 nm for actuation voltages up to 15 V.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1017-2653</s0></fA01><fA05><s2>4755</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Phase matching pseudo-resonant tunable InP-based MOEMS</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Design, test, integration, and packaging of MEMS/MOEMS 2002 : Cannes, 6-8 May 2002</s1></fA09><fA11 i1="01" i2="1"><s1>ZHOU (D.)</s1></fA11><fA11 i1="02" i2="1"><s1>SUN (K.)</s1></fA11><fA11 i1="03" i2="1"><s1>GARRIGUES (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>LECLERCQ (J-L.)</s1></fA11><fA11 i1="05" i2="1"><s1>REGRENY (P.)</s1></fA11><fA11 i1="06" i2="1"><s1>PENG (J.)</s1></fA11><fA11 i1="07" i2="1"><s1>VIKTOROVITCH (P.)</s1></fA11><fA11 i1="08" i2="1"><s1>PAUTET (C.)</s1></fA11><fA11 i1="09" i2="1"><s1>CORTIAL (S.)</s1></fA11><fA11 i1="10" i2="1"><s1>MOY (J. P.)</s1></fA11><fA11 i1="11" i2="1"><s1>HUGON (X.)</s1></fA11><fA12 i1="01" i2="1"><s1>COURTOIS (Bernard)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>KARAM (Jean Michel)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>MARKUS (Karen W.)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>MICHEL (Bernd)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>MUKHERJEE (Tamal)</s1><s9>ed.</s9></fA12><fA12 i1="06" i2="1"><s1>WALKER (James A.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Tsinghua University, Department of Electronic engineering </s1><s2>Beijing</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratoire d'Electronique, Optoélectronique et Microsystèmes (LEOM) CNR, Ecole Centrale de Lyon, BP 163</s1><s2>69131 Ecully</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>ATMEL-Grenoble Avenue de Rochepleine, BP 123</s1><s2>38521 Saint Egrève</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>CNRS. Techniques de l'informatique et de la microélectronique pour l'architecture d'ordinateurs</s1><s2>Grenoble</s2><s3>FRA</s3><s9>patr.</s9></fA18><fA18 i1="02" i2="1"><s1>International Society for Optical Engineering</s1><s2>Bellingham WA</s2><s3>USA</s3><s9>patr.</s9></fA18><fA20><s1>455-466</s1></fA20><fA21><s1>2002</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA26 i1="01"><s0>0-8194-4518-5</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000108410300530</s5></fA43><fA44><s0>0000</s0><s1>© 2002 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>12 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>02-0555735</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>SPIE proceedings series</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>In this paper, we present a new concept of tunable active Micro-Opto-Electro-Mechanical-System (MOEMS) microdevice for specific applications in the 1.3-2.5 μm wavelength range such as near infrared spectroscopy or optical telecommunications. The proposed optical structure can be used for the realisation of tunable wavelength selective devices (photodetectors or emitters). The device uses a radically new optical design which separates the detector (or emitter) from the filter but place it on top of the filter. As compared to the existing micro-mechanical tunable devices, this concept does present two main advantages such as the improvement of the optical spectral response (forward and backward travelling of the optical waves through the active part) and relaxation of the technological constraints for fabrication (planar monolithic integration of the active component with post-process micromachining).We present here the design, the optical simulations and the fabrication procedure of a first demonstrator consisting in an optically pumped wavelength selective and tunable light emitting diode. The gain active region comprises InAs quantum wires designed for light emission around 1500 nm. The MOEM structure is made of InP/air gap layers. We have obtained an increase of the spontaneous emission by a factor of about 40 and a tuning range about 60 nm for actuation voltages up to 15 V.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F21</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F15</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Dispositif microélectromécanique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Microelectromechanical device</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Dispositivo microelectromecánico</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Microoptique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Microoptics</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Microóptica</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Système optique</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Optical system</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Sistema óptico</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Photodétecteur</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Photodetector</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Fotodetector</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Circuit accordable</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Tunable circuit</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Circuito acordable</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Conception système</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>System design</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Concepción sistema</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Simulation circuit</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Circuit simulation</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Propriété optique</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Optical properties</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Propiedad óptica</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Fabrication microélectronique</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Microelectronic fabrication</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Diode électroluminescente</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Light emitting diode</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Diodo electroluminescente</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Pompage optique</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Optical pumping</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Bombeo óptico</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Fil quantique</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Quantum wire</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Hilo cuántico</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Indium phosphure</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Composé binaire</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Binary compound</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Compuesto binario</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Microusinage</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Micromachining</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Micromaquinado</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Emission spontanée</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Spontaneous emission</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Emisión espontánea</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Spectre émission</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Emission spectrum</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Espectro emisión</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Simulation numérique</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Numerical simulation</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Simulación numérica</s0><s5>18</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Résultat expérimental</s0><s5>19</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Experimental result</s0><s5>19</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Resultado experimental</s0><s5>19</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Forme onde</s0><s5>20</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Waveform</s0><s5>20</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Forma onda</s0><s5>20</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>InP</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>In P</s0><s4>INC</s4><s5>83</s5></fC03><fN21><s1>329</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Design, test, integration, and packaging of MEMS/MOEMS. Conference</s1><s3>Cannes FRA</s3><s4>2002-05-06</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Chine/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 001D46 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd -nk 001D46 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Chine
|étape= Analysis
|type= RBID
|clé= Pascal:02-0555735
|texte= Phase matching pseudo-resonant tunable InP-based MOEMS
}}
| This area was generated with Dilib version V0.5.77. |  |